北京京北通宇电子元件有限公司

场效应管 MOSFET N D2-PAK 200V 17A

晶体管极性:                            ñ频道
电流, Id 连续:                         17A
电压, Vds :                       200V
在电阻RDS（上）:                  180mohm
电压 @ Rds测量:                    5V
阈值电压, Vgs th 典型值:          2V
功耗, Pd:                                125W
封装类型:                                D2-PAK
针脚数:                                   3
SMD标号:                                L640S
上升时间:                               83ns
下降时间:                               52ns
功率, Pd:                               125W
功耗:                                       125W
功耗(于1平方英寸PCB):              3.1W
单脉冲雪崩能量 Eas:                  580mJ
外宽:                                       10.16mm
外部深度:                                 15.49mm
外部长度/高度:                         4.69mm
封装类型:                                 D2-PAK
封装类型, 替代:                         D2-PAK
时间, trr 典型值:                        56ns
晶体管数:                                   1
重复雪崩能量 Ear:               13mJ
栅极电荷 Qg N沟道:                   66nC
���度 @ 电流测量:                 25°C
满功率温度:                               25°C
漏极电流, Id 值:                    17A
热阻, 结至外壳 A:                       1°C/W
电压 Vgs @ Rds on 测量:             5V
电压, Vds:                                  200V
电压, Vds 典型值:                       200V
电压, Vgs Rds N沟道:                    5V
电压, Vgs :                           10V
电容值, Ciss 典型值:                    1800pF
电流, Idm 脉冲:                         68A
电流, Idss :                         25µA
结温, Tj :                            -55°C
结温, Tj :                             150°C
表面安装器件:                            表面安装
重复雪崩电流, Iar:                         10A
阈值电压, Vgs th  :                  1V
阈值电压, Vgs th :                   2V